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Silicide In Circuit

wallpapers Environment 2020-12-04
Titanium silicide TiSi2: Titanium silicide TiSi2 was first widely used in MOS technology above 0.25 microns because of its simple process and good high temperature stability.
 
The process is to first use methods such as physical sputtering to deposit Ti metal on the wafer, and then pass the first annealing at a slightly lower temperature (600-700°C) to obtain a high-resistance mesophase C49, and then pass it through a slightly higher temperature The second annealing (800 ~ 900 ℃) makes the C49 phase transformed into the final low resistance C54 phase.

 
For titanium silicide, the biggest challenge is the linewidth effect of TiSi2. That is, the resistance of TiSi2 will increase as the line width or contact area decreases. The reason is that when the line width becomes too narrow, the phase change process from the C49 phase to the C54 phase will change from the original two-dimensional mode to a one-dimensional mode, which will greatly increase the temperature and time of the phase change.
 
An excessively high annealing temperature will aggravate the diffusion of Si, the main diffusion element, and cause leakage or even short-circuit problems. Therefore, as the size of the MOS keeps getting smaller, the TiSi2 phase transition is insufficient and the contact resistance increases.

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